Single Electron Encoded Logic Memory Elements
نویسندگان
چکیده
To ability to control the transport of individual electrons in Single Electron Tunneling (SET) based circuits creates the conditions for Single Electron Encoded Logic (SEEL). This paper investigates the implementation of SEEL memory elements. After introduction of the threshold gate and buffer/inverter, which serve as basic circuit blocks, SEEL implementations of the RS-latch, D-latch and positive edge-triggered D flip-flop are proposed and verified by simulation. Finally, the area, switching delay and power consumption of the memory elements are compared with CMOS-like SET implementations.
منابع مشابه
Single Electron Encoded SET Memory Elements
Abstract— The ability to control the transport of individual electrons in Single Electron Tunneling (SET) based circuits creates the conditions for Single Electron Encoded Logic (SEEL). The logic values and of SEEL gates are encoded as a net charge of or electron charges. This paper investigates the implementation of SEEL memory elements based on SEEL Boolean logic gates. After the introduction...
متن کاملA Turnstile Based Single Electron Memory Element
In this paper we investigate single electron tunneling (SET) devices from the logic design perspective, using the SET tunnel junction’s ability to control the transport of individual electrons. More in particular, we investigate the behavior of a modified version of the SET turnstile circuit and propose applying the circuit as a single electron encoded logic (SEEL) memory element. We analyze th...
متن کاملSingle Electron Encoded Logic Circuits
In this paper we investigate single electron tunneling (SET) devices from the logic design perspective, using the SET tunnel junction’s ability to control the transport of individual electrons. More in particular, we investigate the behavior of a family of single electron encoded logic (SEEL) gates, consisting of a 2-input AND gate, a 2-input OR gate and a NOT gate, and simulate the gates. A ch...
متن کاملSingle-electron logic and memory devices
Single-electronics is believed to be the leading candidate for future digital electronics which will be able to operate at 10 nm size scale and below. However, the problems of integrated single-electronics are quite serious whereby the future prospects are still uncertain. In this paper we discuss the operation principles and required parameters of several proposed families of single-electron l...
متن کاملA Family of Single Electron Static Buffered Boolean Logic
In this paper we investigate single electron tunneling (SET) devices from the logic design perspective, using the SET tunnel junction’s ability to control the transport of individual electrons. More specifically, we focus on the implementation of a family of Boolean Single Electron Encoded Logic (SEEL) gates, in which the logic values 0 and 1 are encoded as a net charge of 0 or 1 electron charg...
متن کامل